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2N6609 |
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| Part Number | 2N6609 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other ... |
| Features |
http://onsemi.com
• • • • • Pb−Free Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs 16 A COMPLEMENTARY POWER TRANSISTORS 140 V, 150 W MARKING DIAGRAM MAXIMUM RATINGS (Note 1) Rating Collector − Emitter Voltage Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous − Peak (Note 2) Base Current − Conti... |
| Document |
 2N6609 Data Sheet
PDF 99.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6603 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 2 | 2N6604 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 3 | 2N6609 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSITORS |
|
| 4 | 2N6609 |
NTE |
Silicon PNP Transistor |
|
| 5 | 2N6609 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|