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Ordering number :EN4563A 1SS366 Schottky Barrier Diode VHF, UHF Detector and Mixer Applications Features · Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SS366-applied equipment to be made smaller. · Small interterminal capacitance. · Low forward voltage. · High breakdown voltage. Package Dimen.
· Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SS366-applied equipment to be made smaller.
· Small interterminal capacitance.
· Low forward voltage.
· High breakdown voltage.
Package Dimensions
unit:mm 1251A
[1SS366]
1:Anode 2:Cathode 3:Cathode, Anode SANYO:CP
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Reverse Voltage Forward Current Junction Temperature Storage Temperature Symbol VR IF Tj Tstg Conditions Ratings 10 35 125
–55 to +125 Unit V mA
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Forwar.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1SS360 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 2 | 1SS360F |
Toshiba Semiconductor |
Diode |
|
| 3 | 1SS361 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 4 | 1SS361CT |
Toshiba |
Silicon Epitaxial Planar Type Diode |
|
| 5 | 1SS361FV |
Toshiba |
Silicon Epitaxial Planar Type Diode |
|
| 6 | 1SS361LP3 |
Diodes |
ULTRA-SMALL LEADLESS SURFACE MOUNT SWITCHING DIODE |
|
| 7 | 1SS361LPH4 |
Diodes |
SURFACE MOUNT SWITCHING DIODE |
|
| 8 | 1SS361UDJ |
Diodes |
DUAL SURFACE MOUNT SWITCHING DIODE |
|
| 9 | 1SS362 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 10 | 1SS362FV |
Toshiba |
Silicon Epitaxial Planar Type Diode |
|
| 11 | 1SS364 |
Toshiba Semiconductor |
Diode |
|
| 12 | 1SS365 |
Sanyo Semicon Device |
Schottky Barrier Diode |
|