ADVANCE INFORMATION Features • Fast Switching Speed • Ultra-Small Surface Mount Package (1.0 x 0.8mm) • Ultra-Low Profile Package (0.45mm) • Low Forward Voltage: typ of 0.62V at IF = 1.0mA • Fast Reverse Recovery: max of 4.0ns • Low Capacitance: max of 3.0pF • Low Reverse Leakage Current • Ideal for Battery Powered Portable Applications • Lead Free By Desig.
• Fast Switching Speed
• Ultra-Small Surface Mount Package (1.0 x 0.8mm)
• Ultra-Low Profile Package (0.45mm)
• Low Forward Voltage: typ of 0.62V at IF = 1.0mA
• Fast Reverse Recovery: max of 4.0ns
• Low Capacitance: max of 3.0pF
• Low Reverse Leakage Current
• Ideal for Battery Powered Portable Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Notes 2 & 3)
1SS361UDJ
DUAL SURFACE MOUNT SWITCHING DIODE
Mechanical Data
• Case: SOT963
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moist.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SS361 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
2 | 1SS361CT |
Toshiba |
Silicon Epitaxial Planar Type Diode | |
3 | 1SS361FV |
Toshiba |
Silicon Epitaxial Planar Type Diode | |
4 | 1SS361LP3 |
Diodes |
ULTRA-SMALL LEADLESS SURFACE MOUNT SWITCHING DIODE | |
5 | 1SS361LPH4 |
Diodes |
SURFACE MOUNT SWITCHING DIODE | |
6 | 1SS360 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
7 | 1SS360F |
Toshiba Semiconductor |
Diode | |
8 | 1SS362 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
9 | 1SS362FV |
Toshiba |
Silicon Epitaxial Planar Type Diode | |
10 | 1SS364 |
Toshiba Semiconductor |
Diode | |
11 | 1SS365 |
Sanyo Semicon Device |
Schottky Barrier Diode | |
12 | 1SS366 |
Sanyo Semicon Device |
Schottky Barrier Diode |