1SS361FV - Toshiba

1SS361FV Silicon Epitaxial Planar Type Diode

0.5± 0. 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications  AEC-Q101 qualified (Note 1)  Small package  Excellent in forward current and forward voltage characteristics : VF (3) = 0.9 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 0.9 pF (typ.) Note1: For de.

Features

e: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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