1SS360 - Toshiba Semiconductor

1SS360 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 1SS360 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package  Low forward voltage : VF (3) = 0.92 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 2.2 pF (typ.) Note1: For detail information, please contact our sales. Unit: .

Features

and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LJ(CT. Note 3: For devices with the order.