0.5± 0. 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications AEC-Q101 qualified (Note 1) Small package Excellent in forward current and forward voltage characteristics: VF (3) = 0.97 V (typ.) Fast reverse recovery time: trr = 1.6 ns (typ.) Small total capacitance: CT = 0.9 pF (typ.) Note1: For deta.
te: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SS362 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
2 | 1SS360 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
3 | 1SS360F |
Toshiba Semiconductor |
Diode | |
4 | 1SS361 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
5 | 1SS361CT |
Toshiba |
Silicon Epitaxial Planar Type Diode | |
6 | 1SS361FV |
Toshiba |
Silicon Epitaxial Planar Type Diode | |
7 | 1SS361LP3 |
Diodes |
ULTRA-SMALL LEADLESS SURFACE MOUNT SWITCHING DIODE | |
8 | 1SS361LPH4 |
Diodes |
SURFACE MOUNT SWITCHING DIODE | |
9 | 1SS361UDJ |
Diodes |
DUAL SURFACE MOUNT SWITCHING DIODE | |
10 | 1SS364 |
Toshiba Semiconductor |
Diode | |
11 | 1SS365 |
Sanyo Semicon Device |
Schottky Barrier Diode | |
12 | 1SS366 |
Sanyo Semicon Device |
Schottky Barrier Diode |