1SS362 - Toshiba Semiconductor

1SS362 Silicon Epitaxial Planar Type Diode

1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm  Small package  Low forward voltage : VF(3) = 0.97 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 0.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (.

Features

he reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. Note 3: Mounted on a FR4 board. (25.4 mm × 25.4 .