The UTC 18NM70 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications. FEATURES * RDS(ON) ≤ 0.35Ω @ VGS=10V, ID=9.0A * Fast Switching Ca.
* RDS(ON) ≤ 0.35Ω @ VGS=10V, ID=9.0A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
1 TO-220
1 TO-220F
1 TO-220F1
1 TO-220F2
1 TO-220F3
1 TO-251
1 TO-251S2
1 TO-263
1 TO-252
1
DFN8080-5
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
Pin Assignment 12345678
Packing
18NM70L-TA3-T
18NM70G-TA3-T
TO-220 G D S - - - - -
Tube
18NM70L-TF3-T
18NM70G-TF3-T
TO-220F G D S - - - - -
Tube
18NM70L-TF1-T
18NM70G-TF1-T
TO-220F1 G D S - - - - -
Tube
18NM70L-TF2-T
18NM70G-T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 18NM50-U2 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | 18NM60 |
UTC |
N-CHANNEL POWER MOSFET | |
3 | 18NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
4 | 18NM65 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
5 | 18NM80 |
STMicroelectronics |
STF18NM80 | |
6 | 18NM80-Q |
UTC |
800V N-CHANNEL MOSFET | |
7 | 18N10 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
8 | 18N120BN |
Fairchild Semiconductor |
HGTG18N120BN | |
9 | 18N20 |
UTC |
N-CHANNEL POWER MOSFET | |
10 | 18N20 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
11 | 18N20GH |
Advanced Power Electronics |
AP18N20GH | |
12 | 18N20GS |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |