The UTC 18NM60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 0.3Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Cap.
* RDS(ON) < 0.3Ω @ VGS=10V, ID=9.0A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
1 TO-220
1 TO-220F
1 TO-220F1
1 TO-220F2
1 TO-252
1 TO-263
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18NM60L-TA3-T
18NM60G-TA3-T
18NM60L-TF1-T
18NM60G-TF1-T
18NM60L-TF2-T
18NM60G-TF2-T
18NM60L-TF3-T
18NM60G-TF3-T
18NM60L-TN3-R
18NM60G-TN3-R
18NM60L-TQ2-T
18NM60G-TQ2-T
18NM60L-TQ2-R
18NM60G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F1 TO-220F2 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 18NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
2 | 18NM65 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
3 | 18NM50-U2 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
4 | 18NM70 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
5 | 18NM80 |
STMicroelectronics |
STF18NM80 | |
6 | 18NM80-Q |
UTC |
800V N-CHANNEL MOSFET | |
7 | 18N10 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
8 | 18N120BN |
Fairchild Semiconductor |
HGTG18N120BN | |
9 | 18N20 |
UTC |
N-CHANNEL POWER MOSFET | |
10 | 18N20 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
11 | 18N20GH |
Advanced Power Electronics |
AP18N20GH | |
12 | 18N20GS |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |