HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conducti.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49288.
Features
• 54A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Cond.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 18N10 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
2 | 18N20 |
UTC |
N-CHANNEL POWER MOSFET | |
3 | 18N20 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
4 | 18N20GH |
Advanced Power Electronics |
AP18N20GH | |
5 | 18N20GS |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | 18N25 |
UNISONIC TECHNOLOGIES |
18A 250V N-CHANNEL POWER MOSFET | |
7 | 18N25-HC |
UTC |
N-CHANNEL POWER MOSFET | |
8 | 18N40 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
9 | 18N50 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
10 | 18N50 |
Unisonic Technologies |
N-CHANNEL MOSFET | |
11 | 18N50 |
ON Semiconductor |
N-Channel MOSFET | |
12 | 18N50-C |
UTC |
N-CHANNEL MOSFET |