18NM60N - STMicroelectronics

18NM60N N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $4!" ' 3 Ta.

Features

Order codes VDSS (@Tjmax) RDS(on) max. ID PTOT STB18NM60N STF18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance TAB 3 1 D²PAK TAB 3 2 1 TO-220 3 2 1 TO-220FP 3 2 1 TO-247 Applications
■ Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world.