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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Static drain-source on-resistance: RDS(on) ≤0.092Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switch regulators ·Switching converters, motor drivers, relay drivers ·ABSOLUTE MAXIMUM RA.
·Drain Current ID= 18A@ TC=25℃
·Static drain-source on-resistance:
RDS(on) ≤0.092Ω
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switch regulators
·Switching converters, motor drivers, relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
18
IDM
Drain Current-Single Pulsed
72
PD
Total Dissipation @TC=25℃
57
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature.
18N20 - UTC
These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 18N20GH |
Advanced Power Electronics |
AP18N20GH |
|
| 2 | 18N20GS |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | 18N25 |
UNISONIC TECHNOLOGIES |
18A 250V N-CHANNEL POWER MOSFET |
|
| 4 | 18N25-HC |
UTC |
N-CHANNEL POWER MOSFET |
|
| 5 | 18N10 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 6 | 18N120BN |
Fairchild Semiconductor |
HGTG18N120BN |
|
| 7 | 18N40 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 8 | 18N50 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 9 | 18N50 |
Unisonic Technologies |
N-CHANNEL MOSFET |
|
| 10 | 18N50 |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | 18N50-C |
UTC |
N-CHANNEL MOSFET |
|
| 12 | 18N50-MH |
UTC |
N-CHANNEL POWER MOSFET |
|