18N10 - Inchange Semiconductor

18N10 N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay drivers isc Product Specification 18N10 ·ABSOLUTE MAXIMUM RATINGS(Ta=25.

Features

·Drain Current ID= 18A@ TC=25℃
·Drain Source Voltage : VDSS= 100V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch regulators
·Switching converters, motor drivers, relay drivers isc Product Specification 18N10
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 18 A IDM Drain Current-Single Plused 45 A PD Total Dissipation @TC=25℃ 90 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ .