This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STP16N65M2 Product s.
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS
RDS(on) max.
ID
STP16N65M2
650 V
360 mΩ
11 A
• Extremely low gate charge
•
Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
S(3)
technology. Thanks to its strip layout and an improved vertical structure, the device
AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the most demanding high efficiency converters.
Produ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 16N65K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | 16N60 |
nELL |
N-Channel Power MOSFET | |
3 | 16N60 |
IXYS |
IXSA16N60 | |
4 | 16N60 |
Fairchild Semiconductor |
FCP16N60 | |
5 | 16N60-ML |
UTC |
N-CHANNEL POWER MOSFET | |
6 | 16N03L |
Fairchild Semiconductor |
RFD16N03L | |
7 | 16N05 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
8 | 16N06G |
Kexin |
N-Channel Trench Power MOSFET | |
9 | 16N06LE |
Fairchild Semiconductor |
N-Channel Logic Level Power MOSFET | |
10 | 16N15 |
Fairchild Semiconductor |
FQP16N15 | |
11 | 16N25 |
Fairchild Semiconductor |
FQP16N25 | |
12 | 16N25E |
Motorola |
MTB16N25E |