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The UTC 16N60-ML is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES * .
* RDS(ON) ≤ 0.55 Ω @ VGS=10V, ID=8.0A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
16N60L-TF1-T
16N60G-TF1-T
16N60L-TF2-T
16N60G-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube Tube
MARKING
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QW-R502-D46.A
16N60-ML
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 16N60 |
nELL |
N-Channel Power MOSFET |
|
| 2 | 16N60 |
IXYS |
IXSA16N60 |
|
| 3 | 16N60 |
Fairchild Semiconductor |
FCP16N60 |
|
| 4 | 16N65K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 5 | 16N65M2 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 6 | 16N03L |
Fairchild Semiconductor |
RFD16N03L |
|
| 7 | 16N05 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 8 | 16N06G |
Kexin |
N-Channel Trench Power MOSFET |
|
| 9 | 16N06LE |
Fairchild Semiconductor |
N-Channel Logic Level Power MOSFET |
|
| 10 | 16N15 |
Fairchild Semiconductor |
FQP16N15 |
|
| 11 | 16N25 |
Fairchild Semiconductor |
FQP16N25 |
|
| 12 | 16N25E |
Motorola |
MTB16N25E |
|