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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13009SDL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast，etc 2．FEATURES Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-220 4．Electrical Char.
Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Co.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 13009 |
Jingdao |
PNP power transistor |
|
| 2 | 13009 |
STMicroelectronics |
NPN power transistor |
|
| 3 | 13009H |
STMicroelectronics |
NPN power transistor |
|
| 4 | 13009L |
Fairchild Semiconductor |
KSE13009L |
|
| 5 | 13009L |
STMicroelectronics |
NPN power transistor |
|
| 6 | 1300 |
Nihon Dempa Kogyo |
Crystal Clock Oscillators |
|
| 7 | 1300-102-4xx |
Methode Electronics |
2.54mm IDC Connector |
|
| 8 | 13001 |
Elite |
NPN Epitaxial Silicon Transistor |
|
| 9 | 13001-2 |
Jingdao |
NPN power transistor |
|
| 10 | 13001-A |
Jingdao |
NPN power transistor |
|
| 11 | 13001S |
ETC |
Low-frequency amplification environment rated bipolar transistors |
|
| 12 | 13001S8D |
JTD |
NPN Transistor |
|