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KSE13009L KSE13009L High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Em.
VCE = 10V, IC = 0.5A VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 400 Typ. Max. 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA
VBE(sat) Cob fT tON tSTG tF
Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2% Pulse
©2000 Fairchild Semiconductor International
Rev. A, February 2000
http://www.Datasheet4U.com
KSE13009L
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
10
VCE = 5V
IC = 3 IB
hFE, DC CURRENT GAIN
1
V BE(s.
13009L - STMicroelectronics
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high volta.
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|---|---|---|---|---|
| 1 | 13009 |
Jingdao |
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| 2 | 13009 |
STMicroelectronics |
NPN power transistor |
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| 3 | 13009H |
STMicroelectronics |
NPN power transistor |
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| 4 | 13009SDL |
Jingdao |
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| 5 | 1300 |
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Crystal Clock Oscillators |
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| 6 | 1300-102-4xx |
Methode Electronics |
2.54mm IDC Connector |
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| 7 | 13001 |
Elite |
NPN Epitaxial Silicon Transistor |
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| 8 | 13001-2 |
Jingdao |
NPN power transistor |
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| 9 | 13001-A |
Jingdao |
NPN power transistor |
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| 10 | 13001S |
ETC |
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| 11 | 13001S8D |
JTD |
NPN Transistor |
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| 12 | 13002AG |
Unisonic Technologies |
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