13009SDL Jingdao Bipolar Junction Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

13009SDL

Jingdao
13009SDL
13009SDL 13009SDL
zoom Click to view a larger image
Part Number 13009SDL
Manufacturer Jingdao
Description R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13009SDL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1.APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,et...
Features Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3.PACKAGE 1 VD TO-220 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Co...

Document Datasheet 13009SDL Data Sheet
PDF 121.57KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 13009
Jingdao
PNP power transistor Datasheet
2 13009
STMicroelectronics
NPN power transistor Datasheet
3 13009H
STMicroelectronics
NPN power transistor Datasheet
4 13009L
Fairchild Semiconductor
KSE13009L Datasheet
5 13009L
STMicroelectronics
NPN power transistor Datasheet
More datasheet from Jingdao
Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact