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SHENZHEN JTD ELECTRONICS CO.,LTD 13001S8D FEATURES TO-92 Plastic-Encapsulate Transistors TRANSISTOR(NPN) Power switching applications TO-92 LIMMITING VALUES(Tj=25℃ Unless Otherwise Stated) Parameter Symbol Value Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current Ic.
TO-92 Plastic-Encapsulate Transistors TRANSISTOR(NPN) Power switching applications TO-92 LIMMITING VALUES(Tj=25℃ Unless Otherwise Stated) Parameter Symbol Value Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current Ic 0.5 A Total Power Dissipattion Pc 0.65 W Storage Temperature Tstg -65~150 ℃ Junction Temperature Tj 150 ℃ 1. EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS （Tj=25℃ Unless Otherwise Stated） Parameter Symbol Test conditions Min Collector-Base Breakdown Voltage Col.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 13001S |
ETC |
Low-frequency amplification environment rated bipolar transistors |
|
| 2 | 13001 |
Elite |
NPN Epitaxial Silicon Transistor |
|
| 3 | 13001-2 |
Jingdao |
NPN power transistor |
|
| 4 | 13001-A |
Jingdao |
NPN power transistor |
|
| 5 | 1300 |
Nihon Dempa Kogyo |
Crystal Clock Oscillators |
|
| 6 | 1300-102-4xx |
Methode Electronics |
2.54mm IDC Connector |
|
| 7 | 13002AG |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 8 | 13002AH |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 9 | 13003 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 10 | 13003 |
Elite Enterprises |
NPN Epitaxial Silicon Transistor |
|
| 11 | 13003 |
HSiN |
HIGH VOLTAGE AND HIGH SPEED SWITCH |
|
| 12 | 13003AD |
Jingdao |
Bipolar Junction Transistor |
|