11N60E Fuji Electric FMV11N60E Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

11N60E

Fuji Electric
11N60E
11N60E 11N60E
zoom Click to view a larger image
Part Number 11N60E
Manufacturer Fuji Electric
Description Symbol VDS Drain-Source Voltage VDSX Characteristics 600 600 Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitiv...
Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-220F(SLS) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Symbol VDS Drain-Source Voltage VDSX Characteristics 600 600 Continuous Drain Current Pulsed Drain Current...

Document Datasheet 11N60E Data Sheet
PDF 386.41KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 11N60
Fairchild Semiconductor
N-Channel MOSFET Datasheet
2 11N60C2
Infineon
Power Transistor Datasheet
3 11N60C3
Infineon Technologies
Power Transistor Datasheet
4 11N60K-MT
Unisonic Technologies
N-CHANNEL POWER MOSFET Datasheet
5 11N60M6
STMicroelectronics
N-channel Power MOSFET Datasheet
More datasheet from Fuji Electric



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact