The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well.
Order code
VDS
RDS(on) max.
ID
STD11N60M6
600 V
520 mΩ
8A
• Reduced switching losses
• Lower RDS(on) per area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
PTOT 90 W
Applications
• Switching applications
• LLC converters
• Boost PFC converters
Description
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improv.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 11N60 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | 11N60C2 |
Infineon |
Power Transistor | |
3 | 11N60C3 |
Infineon Technologies |
Power Transistor | |
4 | 11N60E |
Fuji Electric |
FMV11N60E | |
5 | 11N60K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
6 | 11N60S5 |
Infineon Technologies AG |
SPP11N60S5 | |
7 | 11N65BS |
PINGWEI |
N-Channel MOSFET | |
8 | 11N65C3 |
Infineon Technologies |
SPP11N65C3 | |
9 | 11N65FS |
PINGWEI |
N-Channel MOSFET | |
10 | 11N65HS |
PINGWEI |
N-Channel MOSFET | |
11 | 11N65M2 |
STMicroelectronics |
N-Channel MOSFET | |
12 | 11N65M5 |
STMicroelectronics |
N-channel Power MOSFET |