These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD11N65M2 STP11N65M2 STU11N65M2 DS1.
Order code
VDS
RDS(on) max.
ID
STD11N65M2
STP11N65M2
650 V
0.68 Ω
7A
STU11N65M2
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
PTOT 85 W
Package DPAK TO-220 IPAK
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 11N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | 11N65BS |
PINGWEI |
N-Channel MOSFET | |
3 | 11N65C3 |
Infineon Technologies |
SPP11N65C3 | |
4 | 11N65FS |
PINGWEI |
N-Channel MOSFET | |
5 | 11N65HS |
PINGWEI |
N-Channel MOSFET | |
6 | 11N65S |
PINGWEI |
N-Channel MOSFET | |
7 | 11N60 |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | 11N60C2 |
Infineon |
Power Transistor | |
9 | 11N60C3 |
Infineon Technologies |
Power Transistor | |
10 | 11N60E |
Fuji Electric |
FMV11N60E | |
11 | 11N60K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
12 | 11N60M6 |
STMicroelectronics |
N-channel Power MOSFET |