11N65FS - PINGWEI

11N65FS N-Channel MOSFET

11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 11N65S ITO-220AB 11N65FS TO-263 11N65BS TO-262 11N65HS Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter .

Features

Channel to Case Thermal resistance , Channel to Ambient Maximum Power Dissipation TC=25℃ Symbol Rth(J-c) Rth(ch-c) Rth(ch-a) PD ITO-220 3.82 3.82 80 32.7 TO-220 1.03 1.03 62 121 TO-262/263 1.03 1.03 62 121 Units ℃/W ℃/W ℃/W W Version1.0-2015.2 www.perfectway.cn Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Off Characteristics Drain-Source Breakdown Voltage BVDSS Breakdown Temperature Coefficient ΔBVDSS /ΔTJ Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current,Forward IGSSF Gate-Body Leakage Current,Reverse IGSSR On Characterist.