| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
IXYS Corporation |
HiPerFET MOSFET ISOPLUS220TM l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) l Rugged polysilicon gate cell structure l Unclamped Inductive Switc |
|
|
|
|
IXYS Corporation |
PolarHV HiPerFET Power MOSFET ISOPLUS220 z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped |
|
|
|
|
IXYS Corporation |
Trench Power MOSFET ISOPLUS220 l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(<15pF |
|
|
|
|
IXYS Corporation |
Trench Power MOSFET ISOPLUS220 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(<15pF) |
|
|
|
|
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS247 Q Class D = Drain • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure |
|
|
|
|
IXYS Corporation |
(IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220 l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped |
|
|
|
|
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS264 z RDS(on) t = 900 V = 34 A = 220 mΩ < ns ISOPLUS-264TM G D S (Backside) G = Gate S = Source D = Drain Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain |
|
|
|
|
IXYS Corporation |
PolarHV HiPerFET Power MOSFET ISOPLUS220 z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped |
|
|
|
|
IXYS Corporation |
HiPerFETTM Power MOSFETs ISOPLUS247 W °C °C °C °C V~ g • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<25pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell st |
|
|
|
|
IXYS Corporation |
HiPerFETTM Power MOSFETs ISOPLUS247 W °C °C °C °C V~ g • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<30pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell st |
|
|
|
|
IXYS Corporation |
(DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220 z 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip 260 60 2500 11...65 / 2.5...15 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electri |
|
|
|
|
IXYS Corporation |
(IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220 l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped |
|
|
|
|
IXYS Corporation |
(IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM l 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS t = 1 minute leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 V~ g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electric |
|
|
|
|
IXYS Corporation |
(IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM l 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS t = 1 minute leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 V~ g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electric |
|
|
|
|
IXYS Corporation |
HiPerFETTM MOSFET ISOPLUS220 l l l l l 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS, leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 V~ g l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electric |
|
|
|
|
IXYS Corporation |
(IXGR35N120B/C) HiPerFAST IGBT ISOPLUS247 l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight DCB Isolated mounting tab Meets TO-247AD package Outline l High current handling capability l MOS Gate turn-on - drive simplicity Applications Symbol Test Con |
|
|
|
|
IXYS Corporation |
HiPerFAST IGBT ISOPLUS247 l l l l l DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s M |
|
|
|
|
IXYS Corporation |
HiPerFAST IGBT ISOPLUS247 l l l l l DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s M |
|
|
|
|
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS247 Q-Class l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l l l 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 I |
|
|
|
|
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS247 Q-Class l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l l l 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 I |
|