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IXFR15N80Q |
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| Part Number | IXFR15N80Q |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS ISOPLUS247TM Q Class ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and... |
| Features |
D = Drain
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 25 1 0.60 V V nA mA mA W Advantages • Easy assembly • Space savings • High power density • DC-DC converters • Battery chargers... |
| Document |
 IXFR15N80Q Data Sheet
PDF 61.91KB |
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