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IXFR44N50Q |
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| Part Number | IXFR44N50Q |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFR 44N50Q IXFR 48N50Q ID25 ... |
| Features |
l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF)
l l l
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
300 2500 5
IXYS advanced low Qg process Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load Switching (UIS) l Fast intrinsic diode Applications l DC-DC converters
l l l l
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.0 V 4.0 V ±100 nA TJ = 125°C 44N50Q 48N50Q 100 µA 2 mA 120 ... |
| Document |
 IXFR44N50Q Data Sheet
PDF 79.68KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | IXFR44N50P |
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| 2 | IXFR44N50Q |
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| 3 | IXFR44N60 |
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HiPerFETTM Power MOSFETs ISOPLUS247 |
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| 4 | IXFR44N80P |
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| 5 | IXFR40N50Q2 |
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