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IXFC80N085 |
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| Part Number | IXFC80N085 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFC 80N08 IX... |
| Features |
l
1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS t = 1 minute leads-to-tab
300
11..65/2.4..11 Nm/lb 2500 2 V~ g
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsicRectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80N08 80N085 2.0 80 85 4.0 ± 100 TJ = 25°C TJ = 125°C V V nA
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| Document |
 IXFC80N085 Data Sheet
PDF 98.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFC80N08 |
IXYS Corporation |
(IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM |
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| 2 | IXFC80N10 |
IXYS Corporation |
HiPerFETTM MOSFET ISOPLUS220 |
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| 3 | IXFC110N10P |
IXYS |
PolarHT HiPerFET Power MOSFET |
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| 4 | IXFC12N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET ISOPLUS220 |
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| 5 | IXFC13N50 |
IXYS Corporation |
HiPerFET MOSFET ISOPLUS220 |
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