Will Semiconductor WNM fiche technique

No.	Partie #	Fabricant	Description
1	WNM6001	Will Semiconductor	N-Channel MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23 Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Powe
2	WNMD2155	Will Semiconductor	Dual N-Channel MOSFET z Trench Technology 1 234 S1 G1 S2 G2 Pin configuration (Top view) 8 7 65 z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L Applications z Driver for Relay, So
3	WNM2016	Will Semiconductor	N-Channel MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 SOT-23 D 3 12 GS Configuration (Top View) 3 WT6* 12 WT6 * = Device Code = Month (A~Z)
4	WNMD2174	Will Semiconductor	Dual N-Channel MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package CSP 4L Applications  Lithium-Ion battery p
5	WNMD2167	Will Semiconductor	Dual N-Channel MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  P
6	WNMD2156	Will Semiconductor	Dual N-Channel MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package TSSOP-8L Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Po
7	WNM2021	Will Semiconductor	N-Channel MOSFET z z z z z Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOT-323 * 1 3 21* 2 21 = Device Code = Month (A~Z) Marking Applications Device Order information Package SOT-323 Shi
8	WNMD2179	Will Semiconductor	Dual N-Channel MOSFET TSOT-23-6L G1 D1/D2 G2 654 1 23 S1 D1/D2 S2 Pin configuration (Top view) 6 54  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package TSOT-23-6L Applica
9	WNMD3014	Will Semiconductor	Dual N-Channel MOSFET SOP-8L D1 D1 D2 D2 8 76 5 1 234 S1 G1 S2 G2 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L Applications z Driver for Relay, Solenoid, Mo
10	WNM07N60F	Will Semiconductor	N-Channel MOSFET  600V@TJ=25°C  Typ.RDS(on)=1.0 Ω  Low gate charge  100% avalanche tested  100% Rg tested D GDS TOT-O22- 0 G S GD S TO-220F WNM07N60 =Devices code Y Y =Year WW =Week WNM07N60F =Devices code Y Y =Year WW =Week Order Information Device P
11	WNMD2165	Will Semiconductor	Dual N-Channel MOSFET Pin configuration (Top view)  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-363 Applications  Driver for Relay, Solenoid, Motor, LED etc.
12	WNMD2171	Will Semiconductor	Dual N-Channel MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package CSP 4L WNMD2171 www. sh-willsemi.com MOSFET1 Gate 1 MOSFET2 Gate 2 Gate Protection Diode So
13	WNMD2173	Will Semiconductor	Dual N-Channel MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package CSP 4L MOSFET1 Gate 1 MOSFET2 Gate 2 Gate Protection Diode Source 1 Body Diode CSP 4L Source
14	WNMD2154	Will Semiconductor	Dual N-Channel MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-563 WNMD2154 Http//:www.willsemi.com SOT-563 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 54* 1 23
15	WNMD2157	Will Semiconductor	Dual N-Channel MOSFET G1 D1/D2 65 G2 4 1 23 S1 D1/D2 S2 Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applications 6 54 2
16	WNM2020	Will Semiconductor	N-Channel MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-23 Applications D 3 12 GS Pin configuration (Top view) 3 W28* 12 W28 = Device Code * = Month (A~Z) Marking z DC-DC
17	WNM2024	Will Semiconductor	N-Channel MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications WNM2024 Http//:www.willsemi.com SOT-23 D 3 12 GS Pin configuration (Top view
18	WNM2030	Will Semiconductor	N-Channel MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-723 Applications 3 2* 1 2 2 = Device Code * = Month (A~Z) Marking Order information z Dri
19	WNM2034	Will Semiconductor	N-Channel MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications SOT-23 D 3 12 GS Configuration (Top View) W34* W34 * = Device Code = Mont
20	WNM3013	Will Semiconductor	N-Channel MOSFET z Trench N-Channel z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with SOT-723 12 GS Pin Configuration 3 KN 12 KN = Device Code Applications Marking