Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
WNMD2167 |
Click to view a larger image
| Part Number | WNMD2167 |
| Manufacturer | Will Semiconductor |
| Description | The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC... |
| Features |
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-6L Applications Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging Pin configuration (Top view) 6 54 2167 YYWW 1 23 2167 = YY = WW = Device Code Year Week Marking Order information Device Package Shipping WNMD2167-6/TR SOT-23-6L 3000/Reel&Tape Will Semiconduct... |
| Document |
 WNMD2167 Data Sheet
PDF 617.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WNMD2160 |
Will Semiconductor |
Dual N-Channel MOSFET |
|
| 2 | WNMD2162 |
Will Semiconductor |
Dual N-Channel MOSFET |
|
| 3 | WNMD2162A |
Will Semiconductor |
Dual N-Channel MOSFET |
|
| 4 | WNMD2165 |
Will Semiconductor |
Dual N-Channel MOSFET |
|
| 5 | WNMD2166 |
Will Semiconductor |
Dual N-Channel MOSFET |
|