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Weitron Technology WTC DataSheet

No. Partie # Fabricant Description Fiche Technique
1
WTC2308

Weitron Technology
Enhancement Mode Power MOSFET
SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <160 mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Dr
Datasheet
2
WTC2302

Weitron Technology
Enhancement Mode Power MOSFET
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain
Datasheet
3
WTC2304

Weitron Technology
Enhancement Mode Power MOSFET
2 SOURCE 3 1 2 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable Application: *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Volta
Datasheet
4
WTC2306

Weitron Technology
Enhancement Mode Power MOSFET
* Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package 3 1 2 Applications: * Power Management in Notebook Computer * Portable Equipment * Battery Powered System
Datasheet
5
WTC2306A

Weitron Technology
Enhancement Mode Power MOSFET
SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Con tinuous Dra
Datasheet
6
WTC2307

Weitron Technology
Enhancement Mode Power MOSFET
SOURCE 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS=-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Pow
Datasheet
7
WTC2305

Weitron Technology
P-Channel Enhancement Mode Power MOSFET
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powe
Datasheet
8
WTC2312

Weitron Technology
N-Channel Enhancement Mode Power MOSFET
* Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V * Capable of 2.5V gate drive * Rugged and Reliable * Lower On-Resistance 2 SOURCE 3 1 2 SOT-23 Application: * Power Management i
Datasheet
9
WTC2301

Weitron Technology
Enhancement Mode Power MOSFET
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ @V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Pow
Datasheet
10
WTC2303

Weitron Technology
Enhancement Mode Power MOSFET
SOURCE 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <240mΩ@V GS =-10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Pow
Datasheet
11
WTC2305

Weitron Technology
Enhancement Mode Power MOSFET
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powe
Datasheet
12
WTC2305A

Weitron Technology
Enhancement Mode Power MOSFET
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS =-10V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package 3 1 2 SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Volta
Datasheet
13
WTC2309

Weitron Technology
Enhancement Mode Power MOSFET
3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <75m Ω@V GS =-10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
Datasheet
14
WTC2310

Weitron Technology
Enhancement Mode Power MOSFET
SOURCE 2 3 1 2 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Cur
Datasheet
15
WTC6401

Weitron Technology
Enhancement Mode Power MOSFET
GATE SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain
Datasheet
16
WTC2301

Weitron Technology
P-Channel Enhancement Mode Power MOSFET
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ @V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Pow
Datasheet
17
WTC2302

Weitron Technology
N-Channel Enhancement Mode Power MOSFET
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain
Datasheet
18
WTC2306

Weitron Technology
N-Channel Enhancement Mode Power MOSFET
* Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package 3 1 2 Applications: * Power Management in Notebook Computer * Portable Equipment * Battery Powered System
Datasheet



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