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WTC2306 |
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| Part Number | WTC2306 |
| Manufacturer | Weitron Technology |
| Description | WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE Features: * Super High Dense Cell Design For Low R... |
| Features |
* Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package
3 1 2
Applications:
* Power Management in Notebook Computer * Portable Equipment * Battery Powered System
SOT-23
Maximum Ratings (TA
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation (TA=25°C) Maximum Junction-Ambient2 Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value 30 ±12 5.8 30 1.4 140 -55~+150 -55~+150 Unit V V A A W °C/W ... |
| Document |
 WTC2306 Data Sheet
PDF 779.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WTC2301 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|
| 2 | WTC2301 |
Weitron Technology |
P-Channel Enhancement Mode Power MOSFET |
|
| 3 | WTC2302 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|
| 4 | WTC2302 |
Weitron Technology |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | WTC2303 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|