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WTC2306A |
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| Part Number | WTC2306A |
| Manufacturer | Weitron Technology |
| Description | WTC2306A N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 3 1 2 *Super High Dense Cell Desig... |
| Features |
SOURCE
2
3 1 2
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 ,V GS @4.5V(T A ,V GS @4.5V(T A Pulsed Drain Current
1,2
Unless Otherwise Specified) Symbol
VDS VGS ID IDM PD R θJA TJ , Tstg
Value
30 ± 12 5 4 20 1.38 90 - 55~+150
Unit
V
A
Total Power Dissipation(T A =25 ˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range
W ˚C/W ˚C
Device Marking
... |
| Document |
 WTC2306A Data Sheet
PDF 735.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WTC2306 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|
| 2 | WTC2306 |
Weitron Technology |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | WTC2301 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|
| 4 | WTC2301 |
Weitron Technology |
P-Channel Enhancement Mode Power MOSFET |
|
| 5 | WTC2302 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|