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WTC2309 |
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| Part Number | WTC2309 |
| Manufacturer | Weitron Technology |
| Description | WTC2309 P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -3.7 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 2 www.DataSheet4U.com Features: 3 1 2 *Super High Dense Cell De... |
| Features |
3 1 2
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <75m Ω@V GS =-10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(TA=25˚C) ,(TA=70˚C) Pulsed Drain Current
1,2
Unless Otherwise Specified) Symbol
VDS VGS ID I DM PD R θJA TJ , Tstg
Value
-30 ±20 -3.7 -3.0 -12 1.38 90 -55~+150
Unit
V
A
Total Power Dissipation(TA=25˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range
W ˚C/W ˚C
Device Marking
WTC2309=2309
ht... |
| Document |
 WTC2309 Data Sheet
PDF 427.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WTC2301 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|
| 2 | WTC2301 |
Weitron Technology |
P-Channel Enhancement Mode Power MOSFET |
|
| 3 | WTC2302 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|
| 4 | WTC2302 |
Weitron Technology |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | WTC2303 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|