WTC2310 |
Part Number | WTC2310 |
Manufacturer | Weitron Technology |
Description | WTC2310 N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 3 AMPERS DRAIN SOUCE VOLTAGE 60 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 3 1 2 *Super High Dense Cell Design F... |
Features |
SOURCE
2
3 1 2
*Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@10V(TA ,VGS@10V(TA Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ℃ ) Maximum Junction-ambient3
Unless Otherwise Specified) Symbol
VDS VGS ID IDM PD R
JA
Value
60 ±20 3.0 2.3 10 1.38 90 -55~+150
Unit
V
A
W ℃/W ℃
Operating Junction and Storage Temperature Range
TJ, Tstg
Device Marking
WT 2310=2310
http:www.weitron.com.tw
... |
Document |
WTC2310 Data Sheet
PDF 954.58KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | WTC2312 |
Weitron Technology |
N-Channel Enhancement Mode Power MOSFET | |
2 | WTC2301 |
Weitron Technology |
Enhancement Mode Power MOSFET | |
3 | WTC2301 |
Weitron Technology |
P-Channel Enhancement Mode Power MOSFET | |
4 | WTC2302 |
Weitron Technology |
Enhancement Mode Power MOSFET | |
5 | WTC2302 |
Weitron Technology |
N-Channel Enhancement Mode Power MOSFET |