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Truesemi |
N-Channel MOSFET • 10.5A,400V,Max.RDS(on)=0.53 Ω @ VGS =10V • Low gate charge(typical 30nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.34Ω • Ultra Low gate charge (typ. Qg = 38nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous |
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Truesemi |
N-Channel MOSFET • 750V @TJ = 150 ℃ • Typ. RDS(on) = 0.42Ω • Ultra Low gate charge (typ. Qg = 38nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.58Ω • Ultra Low Gate Charge (typ. Qg = 9nC) • 100% avalanche tested • Rohs Compliant Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (T |
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Truesemi |
N-Channel MOSFET • 9.0A, 500V, RDS(on) = 0.80Ω @VGS = 10 V • Low gate charge ( typical 30nC) • Fast wsitching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low Gate Charge (typ. Qg = 63nC) • 100% avalanche tested • Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source |
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Truesemi |
N-Channel MOSFET • 12.0A, 650V, RDS(on) = 0.750 @VGS = 10 V • Low gate charge ( typical 52nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability D GDS TO-220 GD S TO-220F ● ◀▲ G ● ● S Absolute Maximum Ratings TC = 25°Cun |
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Truesemi |
600V N-Channel MOSFET - 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS I |
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Truesemi |
N-Channel MOSFET • 4.0A,600V,Max.RDS(on)=2.5 Ω @ VGS =10V • Low gate charge(typical 16nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA |
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Truesemi |
N-Channel MOSFET • 18.0A,500V,Max.RDS(on)=0.30 Ω @ VGS =10V • Low gate charge(typical 50nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS |
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Truesemi |
N-Channel MOSFET • 7.0A,600V,Max.RDS(on)=1.3Ω @ VGS =10V • Low gate charge(typical 29nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.38Ω • Ultra Low gate charge (typ. Qg = 38nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -C |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.6Ω • Ultra Low gate charge (typ. Qg = 25nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.85Ω • Ultra Low gate charge (typ. Qg = 15nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous |
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Truesemi |
N-Channel MOSFET • 550V @TJ = 150 ℃ • Typ. RDS(on) = 0.21Ω • Ultra Low gate charge (typ. Qg = 43nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Co |
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Truesemi |
N-Channel MOSFET • 550V @TJ = 150 ℃ • Typ. RDS(on) = 0.48Ω • Ultra Low gate charge (typ. Qg = 25nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.4Ω • Ultra Low Gate Charge (typ. Qg = 30nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.38Ω • Ultra Low Gate Charge (typ. Qg = 35nC) • 100% avalanche tested • Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 2 |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.42Ω • Ultra Low Gate Charge (typ. Qg = 35nC) • 100% avalanche tested • Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 2 |
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