Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
TSP12N60M |
Click to view a larger image
| Part Number | TSP12N60M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchin... |
| Features |
- 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC ... |
| Document |
 TSP12N60M Data Sheet
PDF 346.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP12N60MS |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSP12N65M |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSP120A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 4 | TSP120B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 5 | TSP120C |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|