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TSP840M |
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| Part Number | TSP840M |
| Manufacturer | Truesemi |
| Description | This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior swi... |
| Features |
• 9.0A, 500V, RDS(on) = 0.80Ω @VGS = 10 V • Low gate charge ( typical 30nC) • Fast wsitching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche En... |
| Document |
 TSP840M Data Sheet
PDF 279.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP80R1K3S1 |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSP80R240S1 |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSP80R380S1 |
Truesemi |
N-Channel MOSFET |
|
| 4 | TSP80R500S1 |
Truesemi |
N-Channel MOSFET |
|
| 5 | TSP80R600S1 |
Truesemi |
N-Channel MOSFET |
|