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TSP10N60S |
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| Part Number | TSP10N60S |
| Manufacturer | Truesemi |
| Description | SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technol... |
| Features |
• 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.42Ω • Ultra Low Gate Charge (typ. Qg = 35nC) • 100% avalanche tested • Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) TSB10N60S 9.5* 8* IDM Drain Current - Pulsed (Note 1) 40* VGSS Gate-Source voltage EAS ... |
| Document |
 TSP10N60S Data Sheet
PDF 934.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP10N60C |
Thinki Semiconductor |
600V Heatsink N-Channel Type Power MOSFET |
|
| 2 | TSP10N60M |
Truesemi |
600V N-Channel MOSFET |
|
| 3 | TSP10N65M |
Truesemi |
N-Channel MOSFET |
|
| 4 | TSP10H200S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 5 | TSP10H45S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|