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TSP12N60MS |
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| Part Number | TSP12N60MS |
| Manufacturer | Truesemi |
| Description | SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technol... |
| Features |
• 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.4Ω • Ultra Low Gate Charge (typ. Qg = 30nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avala... |
| Document |
 TSP12N60MS Data Sheet
PDF 913.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP12N60M |
Truesemi |
600V N-Channel MOSFET |
|
| 2 | TSP12N65M |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSP120A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 4 | TSP120B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 5 | TSP120C |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|