| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SK2038 |
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Toshiba Semiconductor |
2SK2039 |
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Toshiba Semiconductor |
2SK2057 |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
N-Channel MOSFET f the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“De |
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Toshiba Semiconductor |
2SK209 |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
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Toshiba Semiconductor |
TK20J60U 123 1. Gate 2. Drain(heat sink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperatur |
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Toshiba Semiconductor |
N-Channel MOSFET 0.6 －0.1 123 1. Gate 2. Drain (heatsink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET emperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individu |
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Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor ling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Unit: mm JEDEC ― JEITA SC−67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) K2013 Part No. (or |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N Channel Junction Type Field Effect Transistor tor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1B Weight: 0.012 g (typ.) |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit ES6 SSM6K202FE 1: Drain 2: Drain 3: Gate 4: Sourc |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20A60W T |
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