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SSM6K208FE |
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| Part Number | SSM6K208FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: mm • 1.8V drive • Low ON-resistance... |
| Features |
emperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm2 )
Start of commercial production
2008-01
1
2014-03-01
SSM6K208FE
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current Gate leakage... |
| Document |
 SSM6K208FE Data Sheet
PDF 230.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM6K201FE |
Toshiba Semiconductor |
Power Management Switch Applications |
|
| 2 | SSM6K202FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | SSM6K203FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | SSM6K204FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | SSM6K209FE |
Toshiba Semiconductor |
MOSFET |
|