2SK2013 |
Part Number | 2SK2013 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 2SK2013 Audio Frequency Power Amplifier Application z High breakdown voltage z High forward transfer admittance z Complementary to... |
Features |
ling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
―
JEITA
SC−67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
K2013
Part No. (or abbreviation code) Lot No.
Note 1
Note 1: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is th... |
Document |
2SK2013 Data Sheet
PDF 258.89KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2010 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
2 | 2SK2010 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK2011 |
Sanyo Semicon Device |
N-Channel MOSFET | |
4 | 2SK2012 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
5 | 2SK2015 |
Panasonic |
Silicon N-Channel MOSFET |