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Toshiba Semiconductor |
Silicon N-Channel MOSFET tc.) are within the JEITA TOSHIBA ― 2-1L1B absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 1.5 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Meth |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET are within the absolute maximum ratings. Weight: 6.0 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabil |
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Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode ting −55 to 125 −40 to 100 Unit °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signifi |
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Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type als. 1 2003-03-27 SSM3K02F Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacit |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit UDF |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET emperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individu |
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Toshiba |
Silicon P-Channel MOSFET (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 49.3 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 32.8 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 27.7 mΩ (max) (@VGS = -3.6 V) RDS(ON) = 25.3 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 22.1 mΩ (max) (@VGS = -8 V) |
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Toshiba |
Silicon N-Channel MOSFET (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 180 mΩ (typ.) (@VGS |
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Toshiba |
Silicon N-Channel MOSFET (1) Gate-Source diode for protection (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA) 3. Packaging and Pin Assig |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A) RDS(ON) = 232 mΩ (max) (@VGS = -4.5 V, ID = -0.5 A) RDS(ON) = 150 mΩ (max) (@VGS = -10 V, ID = -2.0 A) 3. Packaging and Pin Assignm |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET or Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × |
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Toshiba Semiconductor |
Silicon N-Channel MOS Type FET ton toff Test Condition VGS = 10 V, VDS = 0 ID = 100 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = |
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Toshiba Semiconductor |
N-Channel MOSFET ce Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton toff RGS Test Condition VGS = 10 V, VDS = 0 ID = 100 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, I |
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Toshiba Semiconductor |
N-Channel MOSFET jects that come into direct contact with devices should be made of anti-static materials. 1 2002-01-17 Marking 6 5 4 DF 1 2 3 Equivalent Circuit (top view) 6 5 4 Q1 Q2 1 2 3 SSM6N05FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 |
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Toshiba Semiconductor |
N-Channel MOSFET Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure ra |
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Toshiba Semiconductor |
N-Channel MOSFET solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and |
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