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SSM3K02F |
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| Part Number | SSM3K02F |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications · · · Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (ma... |
| Features |
als.
1
2003-03-27
SSM3K02F
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = ±10 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 0.5 A ID = 0.5 A, VGS = 4 V ID = 0.5 A, VGS = 2.5 V VDS = 10 V, VGS = ... |
| Document |
 SSM3K02F Data Sheet
PDF 157.00KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM3K02T |
Toshiba Semiconductor |
High Speed Switching Applications |
|
| 2 | SSM3K01F |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | SSM3K01T |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | SSM3K03FE |
Toshiba Semiconductor |
Silicon N-Channel MOS Type FET |
|
| 5 | SSM3K03FV |
Toshiba Semiconductor |
High Speed Switching Applications |
|