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SSM5H14F |
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| Part Number | SSM5H14F |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM5H14F Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H14F ○ Fuse cut applications of the battery pack • • • 1.8-V drive An N-ch MOSFET and a Schottky Barrier Diod... |
| Features |
ting −55 to 125 −40 to 100 Unit °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test rep... |
| Document |
 SSM5H14F Data Sheet
PDF 305.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM5H11TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|
| 2 | SSM5H12TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|
| 3 | SSM5H16TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|
| 4 | SSM5H01TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|
| 5 | SSM5H03TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|