SSM6N09FU |
Part Number | SSM6N09FU |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications Unit: mm • Small package • Low Drain-Source ON resistance. : Ron = 0.7 Ω (max) (@VGS... |
Features |
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6) Figure 1.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containe... |
Document |
SSM6N09FU Data Sheet
PDF 168.49KB |
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1 | SSM6N03FE |
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2 | SSM6N04FU |
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3 | SSM6N05FU |
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4 | SSM6N15AFE |
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5 | SSM6N15AFU |
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