| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SK3067 eristics (Tc = 25°C) Characteristics Thermal reverse, channel to case Thermal reverse, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 5.0 62.5 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150° |
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Toshiba Semiconductor |
TK30A06J3A e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage |
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Toshiba |
2SK3089 significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design t |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
N-Channel MOSFET : 0.21 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliabi |
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Toshiba Semiconductor |
N-Channel MOSFET re/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maxi |
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Toshiba Semiconductor |
2SK3090 ificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the ap |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volta |
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Toshiba Semiconductor |
N-Channel MOSFET age and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Plea |
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Toshiba Semiconductor |
N-Channel MOSFET ificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the ap |
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Toshiba Semiconductor |
N-Channel MOSFET se Min 20.5 50 10.5 0.25 ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾ Max ¾ ¾ ¾ 1.25 10 5 Unit dBmW % dB V µA µA ¾ Load mismatch No degradation Caution: This transistor is the electrostatic sensitive device. Please handle with caution. Note 1: When the RF output power te |
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Toshiba Semiconductor |
2SK3017 . the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, e |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET ing Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristic |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK30E06N1 1: Gat |
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Toshiba Semiconductor |
SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR ficant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the app |
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Toshiba |
2.5-INCH HARD DISK DRIVE USER MANUAL • 2.5" sized drive • Fluid Dynamic Bearing (FDB) Motor • 1 Platter • 30 Gigabytes* • 9.5mm High • 12ms Average Seek Time • ATA-2,3,4,5 Interface • Supports high transfer rates of 100MB/sec • 2MB Buffer • Rotational spe |
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Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor n the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Ele |
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Toshiba Semiconductor |
N-Channel MOSFET he significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design |
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Toshiba Semiconductor |
N-Channel MOSFET haracteristics Thermal reverse, channel to case Thermal reverse, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 5.0 62.5 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, |
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