Features
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eristics (Tc = 25°C)
Characteristics Thermal reverse, channel to case Thermal reverse, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 5.0 62.5 Unit °C / W °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-06-05
2SK3067
Electrical Characteristics (Tc = 25°C)
Characteristics Gate leakage current Gate−source ...
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