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TK30E06N1 |
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| Part Number | TK30E06N1 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MOSFETs Silicon N-channel MOS (U-MOS-H) TK30E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage ... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TK30E06N1
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
43
A
Drain current (DC)
(Note 1), (Note 3)
ID
30
Drain current ... |
| Document |
 TK30E06N1 Data Sheet
PDF 246.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK30E06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | TK30A06J3A |
Toshiba Semiconductor |
MOSFET |
|
| 3 | TK30A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | TK30A06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK30J25D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|