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2SK30ATM |
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| Part Number | 2SK30ATM |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications Unit: ... |
| Features |
: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 ... |
| Document |
 2SK30ATM Data Sheet
PDF 292.43KB |
| Distributor | Stock | Price | Buy |
|---|
